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 SD1275
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
.160 .13. .COMMON .P
MHz 6 VOLTS EMITTER OUT = 40 W MIN. WITH 9.0 dB GAIN
.380 4L STUD (M135) epoxy sealed ORDER CODE SD1275 BRANDING SD1275
PIN CONNECTION
DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
VCBO VCEO VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
36 16 36 4.0 8.0 70 +200 - 65 to +150
V V V V A W C C C/W
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THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
June 1993
1.2
SD1275
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO I CBO hFE
IC = 15mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V
VBE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 250mA
36 16 4.0 -- 20
-- -- -- -- --
-- -- -- 5 --
V V V mA --
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT GP COB
f = 160 MHz f = 160 MHz f = 1 MHz
PIN = 5.0 W PIN = 5.0 W VCB = 15 V
VCE = 13.6 V VCE = 13.6 V
40 9 --
-- -- 95
-- -- --
W dB pF
TYPICAL PERFORMANCE
POWER GAIN vs FREQUENCY
POWER OUTPUT vs POWER INPUT
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SD1275
TYPICAL PERFORMANCE (cont'd)
POWER OUTPUT vs SUPPLY VOLTAGE (175 MHz)
POWER OUTPUT vs SUPPLY VOLTAGE (145 MHz)
POWER OUTPUT vs SUPPLY VOLTAGE (160 MHz)
IMPEDANCE DATA FREQ. 160 MHz PIN = 3.0 W VCE = 12.5 V ZIN () 1.0 + j 0.4 Z CL () 2.3 + j 0.1
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SD1275
PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0135
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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